Light emitting device, method for fabricating the light emitting device, light emitting device package and lighting system

ABSTRACT

Provided is a light emitting device. The light emitting device includes a light emitting structure layer including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode electrically connected to the first conductive type semiconductor layer, an insulating support member under the light emitting structure layer, and a plurality of conductive layers between the light emitting structure layer and the insulating support member. At least one of the plurality of conductive layers has a width greater than that of the light emitting structure layer and includes a contact part disposed further outward from a sidewall of the light emitting structure layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of co-pending U.S. patent applicationSer. No. 13/280,573 filed on Oct. 25, 2011, which claims priority under35 U.S.C. §119(a) from Korean Patent Application Nos. 10-2010-0104232,filed Oct. 25, 2010, 10-2010-0107293, filed Oct. 29, 2010 and10-2010-0107294, filed Oct. 29, 2010, the subject matters of which arehereby incorporated by reference.

BACKGROUND

The present disclosure relates to a light emitting device, a method forfabricating the light emitting device, a light emitting device package,and a lighting system.

Group III-V nitride semiconductors are spotlighted as core materials oflight emitting diodes (LEDs) or laser diodes (LDs) due to their physicaland chemical characteristics. Such a group III-V semiconductor may beformed of a semiconductor material having a compositional formula ofIn_(x)Al_(y)Ga_(1-x-y)N (0≦x≦1, 0≦y≦1, 0≦x+y≦1).

Light emitting diodes (LEDs) are a kind of semiconductor devices thatconvert electricity into infrared rays or light using characteristics ofcompound semiconductors to transmit/receive the converted infrared raysor light or utilize the converted infrared rays or light as lightsources.

The LEDs or LDs using the semiconductor materials are widely used forlight emitting devices for generating light. For example, the LEDs orLDs are used as light sources of various products such as light emittingparts of keypads of mobile terminals, electronic boards, and lightingdevices.

SUMMARY

Embodiments provide a light emitting device having a new structure, amethod for fabricating the light emitting device, a light emittingdevice package, and a lighting system.

Embodiments provide a light emitting device including a plurality ofconductive layers and insulation support members under a light emittingstructure layer, a method for fabricating the light emitting device, alight emitting device package, and a lighting system.

In one embodiment, a light emitting device includes: a light emittingstructure layer including a first conductive type semiconductor layer, asecond conductive type semiconductor layer, and an active layer betweenthe first conductive type semiconductor layer and the second conductivetype semiconductor layer; a first electrode electrically connected tothe first conductive type semiconductor layer; an insulating supportmember under the light emitting structure layer; and a plurality ofconductive layers between the light emitting structure layer and theinsulating support member, wherein at least one of the plurality ofconductive layers has a width greater than that of the light emittingstructure layer and includes a contact part disposed further outwardfrom a sidewall of the light emitting structure layer.

In another embodiment, a light emitting device includes: a lightemitting structure layer including a first conductive type semiconductorlayer, a second conductive type semiconductor layer, and an active layerbetween the first conductive type semiconductor layer and the secondconductive type semiconductor layer; a first electrode electricallyconnected to the first conductive type semiconductor layer; aninsulating support member under the light emitting structure layer; aplurality of conductive layers between the light emitting structurelayer and the support member; and a protection member between the lightemitting structure layer and the support member, wherein at least one ofthe plurality of conductive layers has a width greater than that of thelight emitting structure layer and includes a first contact partcorresponding to the first electrode.

In further another embodiment, a light emitting device package includes:a body; a plurality of lead electrodes including first and second leadelectrodes on the body; a light emitting device on the second leadelectrode, the light emitting device being electrically connected to thefirst and second lead electrodes; and a molding member covering thelight emitting device, wherein the light emitting device includes: alight emitting structure layer including a first conductive typesemiconductor layer, a second conductive type semiconductor layer, andan active layer between the first conductive type semiconductor layerand the second conductive type semiconductor layer; a first electrodeelectrically connected to the first conductive type semiconductor layer;an insulating support member under the light emitting structure layer;and a plurality of conductive layers between the light emittingstructure layer and the insulating support member, wherein at least oneof the plurality of conductive layers has a width greater than that ofthe light emitting structure layer and includes a contact part disposedfurther outward from a sidewall of the light emitting structure layer.

The details of one or more embodiments are set forth in the accompanyingdrawings and the description below. Other features will be apparent fromthe description and drawings, and from the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a side sectional view of a light emitting device according toa first embodiment.

FIGS. 2 to 9 are views of a process for fabricating the light emittingdevice according to the first embodiment.

FIG. 10 is a side sectional view of a light emitting device according toa second embodiment.

FIG. 11 is a side sectional view of a light emitting device according toa third embodiment.

FIG. 12 is a sectional view of a light emitting device according to afourth embodiment.

FIGS. 13 to 21 are views of a process for fabricating the light emittingdevice according to the fourth embodiment.

FIG. 22 is a sectional view of a light emitting device according to afifth embodiment.

FIG. 23 is a side sectional view of a light emitting device according toa sixth embodiment.

FIGS. 24 to 31 are views of a process for fabricating the light emittingdevice according to the sixth embodiment.

FIG. 32 is a side sectional view of a light emitting device according toa seventh embodiment.

FIG. 33 is a sectional view of a light emitting device package includingthe light emitting device according to the embodiments.

FIG. 34 is a view of a backlight unit including the light emittingdevice package according to the embodiments.

FIG. 35 is a perspective view of a lighting unit including the lightemitting device package according to the embodiments.

DETAILED DESCRIPTION OF THE EMBODIMENTS

In the description of embodiments, it will be understood that when alayer (or film), region, pattern or structure layer is referred to asbeing ‘on’ or ‘under’ another layer (or film), region, pad or pattern,the terminology of ‘on’ and ‘under’ includes both the meanings of‘directly’ and ‘indirectly’. Further, the reference about ‘on’ and‘under’ each layer will be made on the basis of drawings.

In the drawings, the thickness or size of each layer is exaggerated,omitted, or schematically illustrated for convenience in description andclarity. In the drawings, the thickness or size of each layer isexaggerated, omitted, or schematically illustrated for convenience indescription and clarity.

Hereinafter, a light emitting device, a light emitting device package, alighting system according to embodiments will be described withreference to accompanying drawings.

FIG. 1 is a side sectional view of a light emitting device according toa first embodiment.

Referring to FIG. 1, a light emitting device 100 includes a firstelectrode 115, a light emitting structure layer 135, a current blockinglayer (CBL) 140, a plurality of conductive layers 150, 160, 170, and180, and a support member 190.

The light emitting structure layer 135 includes a first conductive typesemiconductor layer 110 electrically connected to the first electrode115, a second conductive type semiconductor layer 130, and an activelayer 120 disposed between the first conductive type semiconductor layer110 and the second conductive type semiconductor layer 130. The lightemitting structure layer 135 may generate light by recombining electronsand holds supplied from the first and second conductive typesemiconductor layers 110 and 130 with each other in the active layer120.

The light emitting structure layer 135 may include a compoundsemiconductor layer including group III-V elements, e.g., the firstconductive type semiconductor layer 110, the active layer 120 under thefirst conductive type semiconductor layer 110, and the second conductivetype semiconductor layer 130 under the active layer 120.

The first conductive type semiconductor layer 110 may be formed of agroup III-V compound semiconductor which is doped with a firstconductive type dopant, e.g., a semiconductor material having acompositional formula of In_(x)Al_(y)Ga_(1-x-y)N (0≦x≦1, 0≦y≦1,0≦x+y≦1). For example, the first conductive type semiconductor layer 110may be formed of one of GaN, AlGaN, InGaN, InAlGaN, AlInN, AlGaAs, GaP,GaAs, GaAsP, and AlGaInP. When the first conductive type semiconductorlayer 110 is an N-type semiconductor layer, the first conductive typedopant may include N-type dopants such as Si, Ge, Sn, Se, and Te. Thefirst conductive type semiconductor layer 110 may be formed as a singlelayer or a multi layer, but is not limited thereto. The first conductivetype semiconductor layer 110 may include semiconductor layers havingband gaps different from each other. The semiconductor layers having theband gaps different from each other may be alternately repeated in twoor more pairs to form a super lattice structures.

The active layer 120 may be disposed under the first conductive typesemiconductor layer 110. The active layer 120 may have one of a singlequantum well structure, a multi quantum well (MQW) structure, a quantumdot structure, and a quantum wire structure. The active layer 120 mayhave a cycle of a well layer and a barrier layer, e.g., a cycle of anInGaN well layer/GaN barrier layer or an InGaN well layer/AlGaN barrierlayer using the group III-V compound semiconductor material. The welllayer may be formed of one of GaN, AN, AlGaN, InGaN, InAlGaN, AlInN,AlGaAs, GaP, GaAs, GaAsP, and AlGaInP, and the barrier layer may beformed of at least one of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN,AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. The barrier layer may be formedof a material having a band gap greater than that of the well layer.

The active layer 120 may emit one peak wavelength or a plurality of peakwavelengths within a range from a visible light band to an ultra violetband.

A clad layer (not shown) may be disposed on or/and under the activelayer 120. The clad layer may be formed of a GaN-based semiconductor,but is not limited thereto. The clad layer disposed under the activelayer 120 may include the conductive type dopant, and the clad layerdisposed on the active layer 120 may include a second conductive typedopant.

The second conductive type semiconductor layer 130 may be disposed underthe active layer 120. Also, the second conductive type semiconductorlayer 130 may be formed of a group III-V compound semiconductor which isdoped with the second conductive type dopant. The second conductive typesemiconductor layer 130 may be formed of a semiconductor material havinga compositional formula of In_(x)Al_(y)Ga_(1-x-y)N (0≦x≦1, 0≦y≦1,0≦x+y≦1). For example, the second conductive type semiconductor layer130 may be formed of one of GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN,AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. When the second conductive typesemiconductor layer 130 is a P-type semiconductor layer, the secondconductive type dopant may include P-type dopants such as Mg and Zn. Thesecond conductive type semiconductor layer 130 may include semiconductorlayers having band gaps different from each other. The semiconductorlayers having the band gaps different from each other may be alternatelyrepeated in two or more pairs to form super lattice structures.

The light emitting structure layer 135 may further include a thirdsemiconductor layer under the second conductive type semiconductor layer130. Also, the first conductive type semiconductor layer 110 may berealized as the P-type semiconductor layer, and the second conductivetype semiconductor layer 130 may be realized as the N-type semiconductorlayer. Thus, the light emitting structure layer 135 may have at leastone of an N-P junction structure, a P-N junction structure, an N-P-Njunction structure, and a P-N-P junction structure.

The light emitting structure layer 135 may have inclined side surfacesthrough an isolation etching process for dividing a plurality of chipsinto individual unit chips. That is, the light emitting structure layer135 may have a lower surface having an area greater than that of a topsurface thereof

A light extraction pattern 111 may be disposed on the top surface of thefirst conductive type semiconductor layer of the light emittingstructure layer 135. The light extraction pattern 111 may minimize anamount of light totally reflected by a surface thereof to improve thelight extraction efficiency of the light emitting device 100. The lightextraction pattern 111 may have a random shape and arrangement or aspecific shape and arrangement. For example, the light extractionpattern 111 may have a photonic crystal structure having a cycle ofabout 50 nm to about 3,000 nm. The photonic crystal structure mayeffectively extract light having a specific wavelength range to theoutside due to an interference effect.

Also, the light extraction pattern 111 may have various shapes such as acylindrical shape, a polygonal pillar shape, a cone shape, a polygonalcone shape, a truncated cone, and a polygonal truncated cone, but is notlimited thereto. The light extraction pattern 111 may be omitted.

The first electrode 115 may be electrically connected to the firstconductive type semiconductor layer 110 of the light emitting structurelayer 135. The first electrode 115 may be disposed on a top surface or aportion of the first conductive type semiconductor layer 110. The firstelectrode 115 may be branched in a predetermined pattern shape. Also,the first electrode 115 may have a structure in which at least one padand an electrode pattern having at least one shape and connected to thepad are equally or differently stacked with each other, but is notlimited thereto. The first electrode 115 may be formed of a metal, e.g.,at least one of Cr, Ni, Au, V, W, Ti, and Al. Also, the first electrode115 may supply a power to the first conductive type semiconductor layer110.

The plurality of conductive layers 150, 160, 170, and 180 may include atleast three conductive layers. For example, the plurality of conductivelayers 150, 160, 170, and 180 may include first to fourth conductivelayers 150, 160, 170, and 180.

The first conductive layer 150 may be disposed between the lightemitting structure layer 135 and the second conductive layer 160. Thesecond conductive layer 160 may be disposed between the first conductivelayer 150 and the third conductive layer 170. The third conductive layer170 may be disposed between the second conductive layer 160 and thefourth conductive layer 180. The fourth conductive layer 180 may bedisposed between the third conductive layer 170 and the support member190.

The first conductive layer 150 makes ohmic contact with the secondconductive type semiconductor layer 130 to smoothly supply a power tothe second conductive type semiconductor layer 130. Also, a wire forsupplying a power may be connected to the first conductive layer 150.

The first conductive layer 150 may contact the light emitting structurelayer 135 except a portion on which the current blocking layer 140 isdisposed. The first conductive layer 150 may selectively includes alight-transmitting conductive layer and a metal. For example, the firstconductive layer 150 may be realized as a single or multi layer by usingat least one of indium tin oxide (ITO), indium zinc oxide (IZO), indiumzinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium galliumzinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide(AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrO_(x),RuO_(x), RuO_(x)/ITO, Ni, Ag, Pt, In, Zn, and Sn.

The first conductive layer 150 may be further disposed under the currentblocking layer 140, but is not limited thereto.

A distance D1 between a side surface of the first conductive layer 150and a sidewall of the light emitting structure layer 135 may be greaterthan a thickness of an insulation layer 195. The first conductive layer150 may have a width at least greater than that of the light emittingstructure layer 135. A portion 150A of the first conductive layer 150may protrude outward from the sidewall 137 of the light emittingstructure layer 135 to define a bonding part. A top surface of theportion 150A of the first conductive layer 150 may be further exposedoutward from the sidewall 137 of the light emitting structure layer 135and a side surface of the insulation layer 195. Thus, a second electrodemay be disposed on the top surface of the portion 150A of the firstconductive layer 150, or the wire may be directly bonded to the topsurface of the portion 150A of the first conductive layer 150. When thewire is directly bonded, a bonding material may be further disposed onthe portion 150A of the first conductive layer 150, but is not limitedthereto.

The current blocking layer 140 may be disposed between the firstconductive layer 150 and the second conductive type semiconductor layer130. At least one or more current blocking layers 140 may be disposed ona portion at which at least portion of the current blocking layer 140vertically overlaps or does not vertically overlaps the first electrode115. Thus, it may prevent a current from being concentrated into theshortest distance between the first electrode 115 and the support member190 to improve the light emitting efficiency of the light emittingdevice 100. The current blocking layer 140 may be disposed correspondingto at least portion of the first electrode 115 in a thickness directionof the light emitting structure layer 135. The current blocking layer140 may have an area greater than about 50% of that of the firstelectrode 115 or an area greater than that of the first electrode 115,but is not limited thereto.

The current blocking layer 140 may be formed of at least one of amaterial having insulating properties and a material schottky-contactingthe second conductive type semiconductor layer 130. For example, thecurrent blocking layer 140 may be formed of at least one of ITO, IZO,IZTO, IAZO, IGZO, IGTO, AZO, ATO, ZnO, SiO₂, SiO_(x), SiO_(x)N_(y),Si₃N₄, Al₂O₃, TiO_(x), TiO₂, Ti, Al, and Cr. The current blocking layer140 may be formed of a material different from that of the firstconductive layer 150.

The current blocking layer 140 may be disposed between the secondconductive layer 160 and the first conductive layer 150 or removed.

The second conductive layer 160 may include a reflective layer. Also,the second conductive layer 160 may be formed of a metallic material,and thus may have various reflective indexes according tocharacteristics of the metallic material. The reflective layer mayreflect light incident from the light emitting structure layer 135 toimprove the light emitting efficiency of the light emitting device 100.For example, the second conductive layer 160 may be formed of a metal oralloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt,Au, and Hf. Alternatively, the second conductive layer 160 may be formedas a multi layer using the metal or alloy and a light-transmittingconductive material such as ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, orATO. For example, the second conductive layer 160 may have a stackedstructure such as IZO/Ni, AZO/Ag, IZO/Ag/Ni, AZO/Ag/Ni, Ag/Cu, orAg/Pd/Cu.

The third conductive layer 170 may radiate heat generated in the lightemitting structure layer 135 to prevent the light emitting device 100from be deteriorated in reliability. Also, the third conductive layer170 may have a thickness of about 0.1 μm to about 200 μm. The thirdconductive layer 170 may contact the light emitting structure layer 135with a contact resistance greater than that of the first conductivelayer 150. The third conductive layer 170 may be formed of at least oneof Ni, Pt, Ti, W, V, Fe, and Mo. Also, the third conductive layer 170may be formed as a single or multi layer. The third conductive layer 170may be omitted.

The fourth conductive layer 180 may serve as a bonding layer and bedisposed between the support member 190 and the third conductive layer170 to enhance an adhesion therebetween. The fourth conductive layer 180may include a barrier metal layer or a bonding metal layer. For example,the fourth conductive layer 180 may be formed of at least one of Ti, Au,Sn, Ni, Cr, Ga, Nb, In, Bi, Cu, Al, Si, Ag, and Ta. The fourthconductive layer 180 may be omitted.

The support member 190 may be formed of an insulating material andsupport the light emitting structure layer 135. The support member 190may be formed of a material having insulating properties, e.g., at leastone material of SiO₂, SiC, SiO_(x), SiO_(x)N_(y), TiO₂, and Al₂O₃. Also,the support member 190 may be formed of a material having a specificresistance of about 1×10⁻⁴ Ω/cm or more. When the support member 190 isformed of the insulating material, a limitation in which the metal ismelted by heat of a laser when the light emitting structure layer 135 isdivided into chip units to generate burrs may be solved. A conductivesupport member is disposed under the support member 190 formed of theinsulating material and is formed a metal material.

Alternatively, the support member 190 may be formed of a material havingconductivity, e.g., at least one of copper (Cu), gold (Au), nickel (Ni),molybdenum (Mo), copper-tungsten (Cu—W), and carrier wafers such as Si,Ge, GaAs, GaN, ZnO, SiC, SiGe, etc. When the support member 190 isformed of the conductive material, thermal efficiency may be improved.

The support member 190 may be changed in thickness according to a designof the light emitting device 100. For example, the support member 190may have a thickness of about 50 μm to 1,000 μm.

A bonding part may be disposed on on or/and under one of the pluralityof conductive layers 150, 160, 170, and 180. The wire or the secondelectrode or/and a second pad may be directly formed on the bondingpart. Thus, at least one of the plurality of conductive layers 150, 160,170, and 180 may be used as a power supply path. For another example,the second electrode may be disposed on side surfaces of the pluralityof conductive layers 150, 160, 170, and 180 or a side surface or theinside of the support member 190, but is not limited thereto.

Hereinafter, a method for fabricating the light emitting deviceaccording to the first embodiment will be described in detail. However,duplicate descriptions, which have been described already in theprevious exemplary embodiment, will be omitted or described briefly.FIGS. 2 to 9 are views of a process for fabricating the light emittingdevice according to the first embodiment.

Referring to FIG. 2, a light emitting structure layer 135 may be formedon a growth substrate 105.

For example, the growth substrate 105 may be formed of at least one ofsapphire (Al₂O₃), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge, but is notlimited thereto. In the current embodiment, a silicon (Si) substrate isexemplified as the growth substrate. When the Si substrate is used asthe growth substrate, a light emitting structure layer 135 including afirst conductive type semiconductor layer, an active layer, and a secondconductive type semiconductor layer is stacked on the growth substrate,and then a support member is coupled thereto. Since the Si growthsubstrate is separated by wet etching without performing a laser liftprocess, the growth substrate may be removed without applying a largeimpact. Thus, it may prevent cracks from occurring in the light emittingstructure layer. Therefore, the light emitting device having improvedreliability may be manufactured.

For example, the light emitting structure layer 135 may be formed usingone of a metal organic chemical vapor deposition (MOCVD) process, achemical vapor deposition (CVD) process, a plasma-enhanced chemicalvapor deposition (PECVD) process, a molecular beam epitaxy (MBE)process, and a hydride vapor phase epitaxy (HVPE) process, but is notlimited thereto.

A buffer layer (not shown) may be formed between the first conductivetype semiconductor layer 110 and the growth substrate 105 to reduce alattice constant difference therebetween.

Referring to FIG. 3, a current blocking layer 140 may be formed on thesecond conductive type semiconductor layer 130. The current blockinglayer 140 may be formed using a patterned mask. The current blockinglayer 140 may be formed on a predetermination area within a firstdistance T1. The first distance T1 may be a width of at least one chipunit, but is not limited thereto.

At least one or more current blocking layers 140 may be formed on aportion at which at least portion of the current blocking layer 140vertically overlaps or does not vertically overlaps a first electrode115. Thus, it may prevent a current from being concentrated into aspecific area within the light emitting structure layer 135.

Referring to FIGS. 4 and 5, a first conductive layer 150 may be formedon the second conductive type semiconductor layer 130 and the currentblocking layer 140. A second conductive layer 160 and a third conductivelayer 170 may be formed on the first conductive layer 150. The firstconductive layer 150 may cover the second conductive type semiconductorlayer 130 and the current blocking layer 140.

For example, the first, second, and third conductive layers 150, 160,and 170 may be formed using one of an E-beam deposition process, asputtering process, and a plasma enhanced chemical vapor deposition(PECVD) process.

Referring to FIG. 6, a fourth conductive layer 180 and a support member190 may be formed on the third conductive layer 170. The fourthconductive layer 180 may be formed between the third conductive layer170 and the support member 190 to enhance an adhesion therebetween.

The support member 190 may be prepared as a separate sheet. The supportmember 190 may adhere to the fourth conductive layer 180 through abonding process or be deposited on the fourth conductive layer 180through a deposition process, but is not limited thereto.

Referring to FIG. 7, the growth substrate 105 may be removed from thelight emitting device of FIG. 6.

The growth substrate 105 may be removed by an etching process. As thegrowth substrate 105 is removed, a surface of the first conductive typesemiconductor layer 110 may be exposed.

Then, an etching process may be performed on the light emittingstructure layer 135 along a boundary of the first distance T1 to dividethe light emitting structure layer 135 into a plurality of lightemitting structure layers 135. A distance D2 between the light emittingstructure layers 135 may be twice the distance D1 of FIG. 1, but is notlimited thereto.

Sidewalls 137 of the light emitting structure layers 135 may be exposed.The etching process may be defined as an isolation etching process. Forexample, the etching process may be realized through a dry etchingprocess such as an inductively coupled plasma process or a wet etchingprocess using an etchant such as KOH, H₂SO₄, or H₃PO₄, but is notlimited thereto.

Although the light emitting structure layer 135 has a vertical sidesurface in the current embodiment, the light emitting structure layer135 may have an inclined side surface by the isolation etching process.

A light extraction pattern 111 may be formed on a top surface of thefirst conductive type semiconductor layer 110. The light extractionpattern 111 may have a random shape and arrangement or a specific shapeand arrangement.

Referring to FIG. 8, the first electrode 115 may be formed on a portionof the top surface of the first conductive type semiconductor layer 110.The first electrode 115 may be formed of a metal, e.g., at least one ofCr, Ni, Au, Ti, and Al.

The first electrode 115 may be formed using one of an E-beam depositionprocess, a physical vapor deposition (PVD) process, a chemical vapordeposition (CVD) process, a plasma laser deposition (PLD) process, adual-type thermal evaporator process, and a sputtering process.

Next, an insulation layer 195 may be formed on the side surface of thelight emitting structure layer 135 and a top surface of the firstconductive type semiconductor layer 110. Although the insulation layer195 is formed on a portion of the top surface of the first conductivetype semiconductor layer in the current embodiment, the insulation layer195 may be formed on an area except the area on which the firstelectrode 115 is formed. The insulation layer 195 may be formed of aninsulating and light-transmitting material, e.g., one of SiO₂, SiO_(x),SiO_(x)N_(y), Si₃N₄, and Al₂O₃.

The insulation layer 195 may be formed using the E-beam depositionprocess, the sputtering process, or the plasma enhanced chemical vapordeposition (PECVD) process.

The light extraction pattern 111 and the insulation layer 195 mayvertically and at least partially overlap each other. Also, the lightextraction pattern 111 and the insulation layer 195 may be formed on thearea except the area on which the first electrode 115 is formed on thefirst conductive type semiconductor layer 110. Thus, it may prevent theinsulation layer 195 and the first conductive type semiconductor layer110 from being easily separated from each other to improve reliabilityof the light emitting device 100.

Referring to FIG. 9, a chip separation process for dividing the lightemitting device of FIG. 8 into device units may be performed to providethe light emitting device 100 according to the current embodiment.

For example, the chip separation process may be performed by selectivelyusing a breaking process in which a physical force is applied using ablade to separate a chip, a laser scribing process in which a chipboundary is irradiated with a laser to separate a chip, and an etchingprocess including a wet or dry etching process, but is not limitedthereto.

According to the current embodiment, when the growth substrate is formedof silicon, the light emitting structure layer 135 including the firstconductive type semiconductor layer 110, an active layer 120, and thesecond conductive type semiconductor layer 130 may be stacked on thegrowth substrate, and then the support member 190 may be coupledthereto. The silicon growth substrate 105 may be separated through thewet etching process without performing the laser scribing process. Thus,the growth substrate may be removed without applying a large impact toprevent cracks from occurring in the light emitting structure layer 135.Therefore, the reliability of the light emitting device may be improved.

Also, the chip separation process for dividing the light emitting deviceinto individual device units may be realized through the laser scribingprocess. In this case, when the support member 190 is formed of aconductive material such as a metal, the support member may be melted byheat of a laser to generate burrs, thereby deteriorating the reliabilityof the device. However, when the support member 190 is formed of aninsulating material, the above-described limitation may be solved.

FIG. 10 is a side sectional view of a light emitting device according toa second embodiment.

Referring to FIG. 10, a light emitting device 100B may include a firstelectrode 115, a second electrode 131, a light emitting structure layer135, a current blocking layer 140, a plurality of conductive layers 150,160, 170, and 180, and a support member 190.

The second electrode 131 may be formed on a portion 150A of an topsurface area of the first conductive layer 150 exposed by an isolationetching process for dividing the light emitting structure layer 135 intoa plurality of light emitting structure layers 135. For another example,the second electrode 131 may be disposed on at least one of the secondto fourth conductive layers 160, 170, and 180.

The second electrode 131 may be formed of a metal, e.g., at least one ofCr, Ni, Au, V, W, Ti, and Al. Also, the second electrode 131 may supplya power to the second conductive type semiconductor layer 130.

The second electrode 131 may be electrically connected to the secondconductive type semiconductor layer 130 through the third conductivelayer 170 to supply a power to the second conductive type semiconductorlayer 130. The second electrode 131 may be connected to a wire.

The second electrode 131 may be spaced from a sidewall 137 of the lightemitting structure layer 135. Also, the second electrode 131 maydirectly contact the portion 150A of the first conductive layer 150. Thepower supplied into the second electrode 131 may be supplied into thesecond conductive type semiconductor layer 130 through the firstconductive layer 150.

The second electrode 131 may be spaced from at least one side surface ofside surfaces of the light emitting structure layer 135 or spaced fromthe plurality of side surfaces. The second electrode 131 may include anelectrode pattern.

FIG. 11 is a sectional view of a light emitting device according to athird embodiment.

Referring to FIG. 11, a light emitting device 100C may include a firstelectrode 115, a second electrode 131, a light emitting structure layer135, current blocking layers 140 spaced from each other, a plurality ofconductive layers 150, 160, 170, and 180, and a support member 190.

The current blocking layers 140 may be spaced from each other on an areaon which the current blocking layers 140 do not vertically overlap thefirst electrode 115. Alternatively, the current blocking layers 140 mayhave holes in an area corresponding to that of the first electrode 115.

The second electrode 131 may be disposed on a portion 150A of the firstconductive layer 150. Also, the second electrode 131 may disposedcorresponding to at least one sidewall 137 of the light emittingstructure layer 135. The second electrode 131 may have a long line shapehaving a length greater than a width of the light emitting structurelayer 135. Also, the second electrode 131 may be disposed correspondingto the plurality of sidewalls 137 of the light emitting structure layer135.

The second electrode 131 may contact or be spaced from an insulationlayer 195 disposed on a side surface of the light emitting structurelayer 135, but is not limited thereto.

The current blocking layers 140 may be disposed on areas different fromeach other to more effectively prevent a current supplied into thesecond conductive type semiconductor layer 130 from being concentrated.The current blocking layer 140 may be provided in plurality or may havea ring shape with a hole therein.

FIG. 12 is a side sectional view of a light emitting device according toa fourth embodiment.

Referring to FIG. 12, a light emitting device 101 may include a firstelectrode 115, a light emitting structure layer 135, a protection member141, a plurality of conductive layers 151, 161, 171, and 180, and asupport member 190.

The protection member 141 may be disposed between the support member 190and the second conductive type semiconductor layer 130. The plurality ofconductive layers 151, 161, 171, and 180 may be disposed between thesupport member 190 and the second conductive type semiconductor layer130.

The light emitting structure layer 135 may include a first conductivetype semiconductor layer 110, an active layer 120, and a secondconductive type semiconductor layer 130. Here, electrons and holessupplied from the first and second conductive type semiconductor layer110 and 130 may be recombined with each other in the active layer 120 togenerate light.

The support member 190 may include an insulating support member or aconductive support member and support the light emitting structure layer135. The support member 190 may be formed of a material havinginsulating properties, e.g., at least one material of SiO₂, SiC,SiO_(x), SiO_(x)N_(y), TiO₂, and Al₂O₃. Also, the support member 190 maybe formed of a material having a specific resistance of about 1×10⁻⁴Ω/cm or more.

For another example, the support member 190 may be formed of a materialhaving conductivity, e.g., at least one of copper (Cu), gold (Au),nickel (Ni), molybdenum (Mo), copper-tungsten (Cu—W), and carrier waferssuch as Si, Ge, GaAs, GaN, ZnO, Sic, SiGe, etc.

The support member 190 may be changed in thickness according to a designof the light emitting device. For example, the support member 190 mayhave a thickness of about 50 μm to 1,000 μm.

The fourth conductive layer 180 may be disposed on the support member190. The fourth conductive layer 180 may serve as a bonding layer and bedisposed between the support member 190 and the third conductive layer171 to enhance an adhesion therebetween. The fourth conductive layer 180may include a barrier metal layer or a bonding metal layer. For example,the fourth conductive layer 180 may be formed of at least one of Ti, Au,Sn, Ni, Cr, Ga, Nb, In, Bi, Cu, Al, Si, Ag, and Ta.

The third conductive layer 171 may be disposed on the fourth conductivelayer 180. A first contact part 172 of the third conductive layer 171may contact the second conductive type semiconductor layer 130. Also,the first contact part 172 may serve as an electrode or bonding pad ofthe second conductive type semiconductor layer 130 to supply a powerinto the second conductive type semiconductor layer 130. The fourthconductive layer 180 may be omitted.

The first contact part 172 of the third conductive layer 171 mayvertically overlap the first electrode 115. Also, the first contact part172 may physically or/and electrically contact the lowermost layer ofthe light emitting structure layer 135, e.g., a lower surface of thesecond conductive type semiconductor layer 130 through the first andsecond conductive layers 151 and 161. The first contact part 172 of thethird conductive layer 171 may have the same width as that W1 of thefirst electrode 115 or a width different from that W1 of the firstelectrode 115. The first contact part 172 of the third conductive layer171 may serve as a current blocking part and makes schottky contact withthe second conductive type semiconductor layer 130. The first contactpart 172 of the third conductive layer 171 may further protrude from atop surface of the third conductive layer 171, but is not limitedthereto.

The third conductive layer 171 may be formed of at least one of Ni, Pt,Ti, W, V, Fe, and Mo. Also, the third conductive layer 171 may be formedas a single or multi layer.

The third conductive layer 171 may radiate heat generated in the lightemitting structure layer 135 to prevent the light emitting device frombe deteriorated in reliability. Also, the third conductive layer 171 mayhave a thickness of about 0.1 μm to about 200 μm. The third conductivelayer 171 may serve as a heat radiating plate for releasing heat and anelectrode for supplying a power under the light emitting structure layer135. The third conductive layer 171 may contact the light emittingstructure layer 135 with a contact resistance greater than that of thefirst conductive layer 151.

The second conductive layer 161 may be disposed on the third conductivelayer 171. The second conductive layer 161 may include a reflectivelayer. Also, the second conductive layer 161 may be formed a metallicmaterial having a reflective index of about 50% or more, and thus mayhave various reflective indexes according to characteristics of themetallic material. Thus, the reflective layer may reflect light incidentfrom the light emitting structure layer 135 to improve light emittingefficiency of the light emitting device.

For example, the second conductive layer 161 may be formed of a metal oralloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt,Au, and Hf. Alternatively, the second conductive layer 160 may be formedas a multi layer using the metal or alloy and a light-transmittingconductive material such as ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, orATO. For example, the second conductive layer 160 may have a stackedstructure such as IZO/Ni, AZO/Ag, IZO/Ag/Ni, AZO/Ag/Ni, Ag/Cu, orAg/Pd/Cu.

The first conductive layer 151 may be disposed on the second conductivelayer 161. The first conductive layer 151 makes ohmic contact with alower surface of the second conductive type semiconductor layer 130 tosmoothly supply a power to the light emitting structure layer 135.

The first conductive layer 151 may be formed of at least one of alight-transmitting conductive layer and a metal. For example, the firstconductive layer 151 may be realized as a single or multi layer by usingat least one of indium tin oxide (ITO), indium zinc oxide (IZO), indiumzinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium galliumzinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide(AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrO_(x),RuO_(x), RuO_(x)/ITO, Ni, Ag, Pt, In, Zn, and Sn.

Each of the first conductive layer 151 and the second conductive layer161 has a hole therein. The first contact part 172 of the thirdconductive layer 171 may be disposed in the hole.

Each of the first conductive layer 151 and the second conductive layer161 may have a width less than that of the third conductive layer 171.The first conductive layer 151 and the second conductive layer 161 mayhave the same width as each other. Alternatively, the second conductivelayer 161 may have a width greater than that of the first conductivelayer 151. At least one of the first conductive layer 151 and the secondconductive layer 161 may be further disposed on a lower surface of theprotection member 141.

The protection member 141 may be disposed on a periphery area of a topsurface of the third conductive layer 171. An inner part 141B of theprotection member 141 may be disposed between the third conductive layer171 and the light emitting structure layer 135 to contact the lowersurface of the second conductive type semiconductor layer 130. An outerpart 141A of the protection member 141 may further protrude outward froma sidewall 137 of the light emitting structure layer 135. A distance D1between an outer surface of the protection member 141 and the sidewall137 of the light emitting structure layer 135 may greater than athickness of an insulation layer 195. Thus, the outer part 141A of theprotection member 141 may have a structure stepped from the sidewall 137of the light emitting structure layer 135.

The protection member 141 may contact a periphery of the lower surfaceof the light emitting structure layer 136. When viewed from the topside, the protection member 141 may have a ring shape, a loop shape, ora frame shape. The protection member 141 may have a continuous ordiscontinuous shape, but is not limited thereto. The first conductivelayer 141 and the second conductive layer 151 may be disposed in thehole defined in the inner part 141B of the protection member 141.

When an isolation etching process is performed during the process forfabricating the light emitting device, the light emitting structurelayer 135 may be etched using a material such as Cl₂ or BCl₂. Here, aportion of the third conductive layer 171 formed of a metallic materialmay be melted during the etching. As a result, when the melted metalcontacts the active layer 120, the third conductive layer 171 and theactive layer 120 may be electrically short-circuited. Thus, theprotection member 141 may be disposed on the periphery of the lowersurface of the light emitting structure layer 135 to improve thereliability of the light emitting device. The protection member 141 maybe disposed on at least one portion of a lower portion of the thirdconductive layer 171 exposed by etching the light emitting structurelayer 135.

The protection member 141 may be formed of a material having insulatingproperties or a material having conductivity less than that of thesecond conductive layer 161 or the third conductive layer 171. Forexample, the protection member 141 may be formed of at least one of ITO,IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, ZnO, SiO₂, SiO_(x), SiO_(x)N_(y),Si₃N₄, Al₂O₃, TiOx, and TiO2. A hole or opened area may be defined inthe outer part 141A of the protection member 141. A power supply membersuch as a wire or pad may be disposed in the hole or opened area andthus electrically connected to the second conductive layer 171.

The light emitting structure layer 135 may be disposed on the firstconductive layer 151 and the protection member 141.

The light emitting structure layer 135 may include a compoundsemiconductor layer including group III-V elements, e.g., the firstconductive type semiconductor layer 110, the active layer 120 under thefirst conductive type semiconductor layer 110, and the second conductivetype semiconductor layer 130 under the active layer 120.

The first conductive type semiconductor layer 110 may be formed of agroup III-V compound semiconductor which doped with a first conductivetype dopant, e.g., a semiconductor material having a compositionalformula of In_(x)Al_(y)Ga_(1-x-y)N (0≦x≦1, 0≦y<1, 0≦x+y≦1). For example,the first conductive type semiconductor layer 110 may be formed of oneof GaN, AN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP,and AlGaInP. When the first conductive type semiconductor layer 110 isan N-type semiconductor layer, the first conductive type dopant mayinclude N-type dopants such as Si, Ge, Sn, Se, and Te. The firstconductive type semiconductor layer 110 may be formed as a single layeror a multi layer, but is not limited thereto.

The active layer 120 may be disposed under the first conductive typesemiconductor layer 110. The active layer 120 may have one of a singlequantum well structure, a multi quantum well (MQW) structure, a quantumdot structure, and a quantum wire structure. The active layer 120 mayhave a cycle of a well layer and a barrier layer, e.g., a cycle of anInGaN well layer/GaN barrier layer or an InGaN well layer/AlGaN barrierlayer using the group III-V compound semiconductor material.

A conductive type clad layer (not shown) may be formed above or/andunder the active layer 120. The conductive type clad layer may be formedof an AlGaN-based semiconductor.

The second conductive type semiconductor layer 130 may be disposed underthe active layer 120. Also, the second conductive type semiconductorlayer 130 may be formed of a group III-V compound semiconductor which isdoped with a second conductive type dopant. The second conductive typesemiconductor layer 130 may be formed of a semiconductor material havinga compositional formula of In_(x)Al_(y)Ga_(1-x-y)N (0≦x≦1, 0≦y≦1,0≦x+y≦1). For example, the second conductive type semiconductor layer130 may be formed of one of GaN, AN, AlGaN, InGaN, InN, InAlGaN, AlInN,AlGaAs, GaP, GaAs, GaAsP, and AlGaInP. When the second conductive typesemiconductor layer 130 is a P-type semiconductor layer, the secondconductive type dopant may include P-type dopants such as Mg and Zn.

The light emitting structure layer 135 may include a semiconductor layerof first conductive under the second conductive type semiconductor layer130. Also, the first conductive type semiconductor layer 110 may berealized as the P-type semiconductor layer, and the second conductivetype semiconductor layer 130 may be realizes as the N-type semiconductorlayer. Thus, the light emitting structure layer 135 may have at leastone of an N-P junction structure, a P-N junction structure, an N-P-Njunction structure, and a P-N-P junction structure.

The light emitting structure layer 135 may have inclined side surfacesthrough an isolation etching process for dividing a plurality of chipsinto individual unit chips.

Also, a light extraction pattern 111 may be disposed on the top surfaceof the light emitting structure layer 135. The light extraction pattern111 may minimize an amount of light totally reflected by a surfacethereof to improve the light extraction efficiency of the light emittingdevice.

The light extraction pattern 111 may have a random shape and arrangementor a specific shape and arrangement. For example, the light extractionpattern 111 may have a photonic crystal structure having a cycle ofabout 50 nm to about 3,000 nm. The photonic crystal structure mayeffectively extract light having a specific wavelength range to theoutside due to an interference effect. Also, the light extractionpattern 111 may have various shapes such as a cylindrical shape, apolygonal pillar shape, a cone shape, a polygonal cone shape, atruncated cone, and a polygonal truncated cone, but is not limitedthereto.

The first electrode 115 may be disposed on a top surface of the lightemitting structure layer 135. The first electrode 115 may be branched ina predetermined pattern shape, but is not limited thereto. Also, thefirst electrode 115 may have a structure in which at least one pad andan electrode pattern having at least one shape and connected to the padare equally or differently stacked with each other, but is not limitedthereto. The first electrode 115 may be formed of a metal, e.g., atleast one of Cr, Ni, Au, V, W, Ti, and Al. Also, the first electrode 115may supply a power to the first conductive type semiconductor layer 110.

Hereinafter, a method for fabricating the light emitting deviceaccording to the fourth embodiment will be described in detail. However,duplicate descriptions, which have been described already in theprevious exemplary embodiment, will be omitted or described briefly.

FIGS. 13 to 21 are views of a process for fabricating a light emittingdevice according to the first embodiment.

Referring to FIG. 13, a light emitting structure layer 135 may be formedon a growth substrate 105.

For example, the growth substrate 105 may be formed of at least one ofsapphire (Al₂O₃), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge, but is notlimited thereto. In the current embodiment, a silicon (Si) substrate isexemplified as the growth substrate. When the Si substrate is used asthe growth substrate, a light emitting structure layer 135 including afirst conductive type semiconductor layer 110, an active layer 120, anda second conductive type semiconductor layer 130 is stacked on thegrowth substrate 105, and then a support member is coupled thereto.Since the Si growth substrate is separated by wet etching withoutperforming a laser lift process, the growth substrate may be removedwithout applying a large impact. Thus, it may prevent cracks fromoccurring in the light emitting structure layer 135. Therefore, thelight emitting device having improved reliability may be manufactured,and also, the light emitting device may be inexpensive to improveproductivity.

For example, the light emitting structure layer 135 may be formed usingone of a metal organic chemical vapor deposition (MOCVD) process, achemical vapor deposition (CVD) process, a plasma-enhanced chemicalvapor deposition (PECVD) process, a molecular beam epitaxy (MBE)process, and a hydride vapor phase epitaxy (HVPE) process, but is notlimited thereto.

A buffer layer (not shown) may be formed between the first conductivetype semiconductor layer 110 and the growth substrate 105 to reduce alattice constant difference therebetween.

Referring to FIG. 14, a protection member 141 may be formed on aboundary of a first distance T1 on the light emitting structure layer135. The protection member 141 may be formed around a boundary of anindividual chip distance using a patterned mask. The protection member141 may have a ring shape, a loop shape, or a frame shape which has ahole therein when viewed from the top side. For example, the protectionmember 141 may be formed using an E-beam deposition process, asputtering process, or a plasma enhanced chemical vapor deposition(PECVD) process.

Referring to FIG. 15, a first conductive layer 151 may be formed on thesecond conductive type semiconductor layer 130, and a second conductivelayer 161 may be formed on the first conductive layer 151. The first andsecond conductive layers 151 and 161 may be formed on a portion of thesecond conductive type semiconductor layer 130. A hole 155 may bedefined in the first and second conductive layers 151 and 161.

For example, the first and second conductive layers 151 and 161 may beformed using one of an E-beam deposition process, a sputtering process,and a plasma enhanced chemical vapor deposition (PECVD) process.

Referring to FIGS. 15 and 16, a third conductive layer 171 may be formedon the second conductive type semiconductor layer 130, a protectionmember 141, and a second conductive layer 161. The third conductivelayer 171 may cover the protection member 141 and the first and secondconductive layers 151 and 161. Also, the third conductive layer 171 maycontact the second conductive type semiconductor layer 130 on an area onwhich the protection member 141 and the first and second conductivelayers 151 and 161 are not formed. A first contact part 172 of the thirdconductive layer 171 may contact the second conductive typesemiconductor layer 130 through the hole 155.

Referring to FIG. 17, a fourth conductive layer 180 may be formed on thethird conductive layer 171, and a support member 190 may be formed onthe fourth conductive layer 180.

The fourth conductive layer 180 may be formed between the thirdconductive layer 171 and the support member 190 to enhance an adhesiontherebetween.

The support member 190 may be prepared as a separate sheet. The supportmember 190 may adhere to the fourth conductive layer 180 through abonding process or be deposited on the fourth conductive layer 180through a deposition process, but is not limited thereto.

Referring to FIG. 18, the growth substrate 105 may be removed from thelight emitting device of FIG. 17. The growth substrate 105 may beremoved by an etching process. The growth substrate 105 may be removedto expose a top surface of the first conductive type semiconductor layer110.

Referring to FIG. 19, an isolation etching process may be performed onthe light emitting structure layer 135 along a boundary (i.e., a chipboundary) of a first distance T to divide the light emitting structurelayer 135 into a plurality of light emitting structure layers 135.Sidewalls 137 of the light emitting structure layers adjacent to eachother are spaced from each other. For example, the isolation etchingprocess may be performed through a dry etching process such as aninductively coupled plasma (ICP) process or a wet etching using anetchant such as KOH, H₂SO₄, H₃PO₄, but is not limited thereto.

Although the light emitting structure layer 135 has a vertical sidesurface in the current embodiment, the light emitting structure layer135 may have an inclined side surface by the isolation etching process.Also, a portion of a top surface of the third conductive layer 171 maybe exposed by the isolation etching process.

A light extraction pattern 111 may be formed on a top surface of thefirst conductive type semiconductor layer 110. The light extractionpattern 111 may have a random shape and arrangement or a specific shapeand arrangement. A wet etching process may be performed on the topsurface of the light emitting structure layer 135 or a physical processsuch as a polishing process may be performed to form the lightextraction pattern 111 having the random shape.

A pattern mask including a desired pattern having a shape correspondingto that of the light extraction pattern 111 may be formed on the topsurface of the first conductive type semiconductor layer 110 to performan etching process along the pattern mask, thereby forming the lightextraction pattern 111 having specific shape and arrangement.

Then, a first electrode 115 may be formed on a portion of the topsurface of the first conductive type semiconductor layer 110. The firstelectrode 115 may be formed of a metal, e.g., at least one of Cr, Ni,Au, Ti, and Al.

The first electrode 115 may be formed using one of an E-beam depositionprocess, a physical vapor deposition (PVD) process, a chemical vapordeposition (CVD) process, a plasma laser deposition (PLD) process, adual-type thermal evaporator process, and a sputtering process.

Referring to FIG. 20, an insulation layer 195 may be formed on a sidesurface of the light emitting structure layer 135 and the firstconductive type semiconductor layer 110. Although the insulation layer195 is formed on a portion of the top surface of the first conductivetype semiconductor layer 110 in the current embodiment, the insulationlayer 195 may be formed on an area except the area on which the firstelectrode 115 is formed. The insulation layer 195 may be formed of aninsulating and light-transmitting material, e.g., one of SiO₂, SiO_(x),SiO_(x)N_(y), Si₃N₄, and Al₂O₃.

The insulation layer 195 may be formed using the E-beam depositionprocess, the sputtering process, or the plasma enhanced chemical vapordeposition (PECVD) process.

The light extraction pattern 111 and the insulation layer 195 mayvertically and at least partially overlap each other. Also, the lightextraction pattern 111 and the insulation layer 195 may be formed on thearea except the area on which the first electrode 115 is formed abovethe first conductive type semiconductor layer 130. Thus, it may preventthe insulation layer 195 and the first conductive type semiconductorlayer 110 from being easily separated from each other to improvereliability of the light emitting device.

According to the current embodiment, when the growth substrate 105 isformed of silicon, the light emitting structure layer 135 including thefirst conductive type semiconductor layer 110, an active layer 120, andthe second conductive type semiconductor layer 130 may be stacked on thegrowth substrate. Also, when the Si growth substrate 105 is separatedusing the wet etching process after the plurality of conductive layers151, 161, 171, and 180 and the support member 190 adhere to each other,cracks may occur in the light emitting structure layer 135. As a result,the light emitting structure layers 135 may be mismatched with eachother. However, when the support member 190 is formed of the insulatingmaterial, it may prevent the cracks from occurring to improve yield ofthe light emitting device.

A chip separation process for dividing the light emitting device intoindividual device units may be realized through a laser scribingprocess. In this case, when the support member 190 is formed of aconductive material such as a metal, the support member 190 may bemelted by heat of a laser to generate burrs, thereby deteriorating thereliability of the device. However, according to the current embodiment,when the support member 190 is formed of the insulating material, theabove-described limitation such as the occurrence of the burrs may besolved.

Referring to FIG. 21, a chip separation process for dividing the lightemitting device of FIG. 20 into individual light emitting device unitsmay be performed to provide the light emitting device 101 according tothe current embodiment.

For example, the chip separation process may be performed by using abreaking process in which a physical force is applied using a blade toseparate a chip, a laser scribing process in which a chip boundary isirradiated with a laser to separate a chip, and an etching processincluding a wet or dry etching process, but is not limited thereto.

FIG. 22 is a sectional view of a light emitting device 101A according toa fifth embodiment.

Referring to FIG. 22, the light emitting device 101A may include a firstelectrode 115, a second electrode 131, a light emitting structure layer135, a first conductive layer 151, a second conductive layer 152, athird conductive layer 171 including a first contact layer 172 and asecond contact layer 173, a fourth conductive layer 180, and a supportmember 190.

The third conductive layer 171 includes the first contact layer 172 andthe second contact layer 173. The first contact layer 172 may correspondto the first electrode 115 in a thickness direction of the lightemitting structure layer 135 and serve as a current blocking layer. Thesecond contact layer 173 may be disposed around a lower surface of thelight emitting structure layer 135. Also, the second contact layer 173may be disposed further outward from a sidewall 137 of the lightemitting structure layer 135 and a side surface of an insulation layer195. A top surface of the second contact part 173 of the thirdconductive layer 171 may be exposed. Also, the second electrode 131 maybe disposed on the top surface of the second contact part 173, or a wiremay be directly bonded to the top surface of the second contact part173. The second electrode 131 may be formed of a metal, e.g., at leastone of Cr, Ni, Au, V, W, Ti, and Al. Also, the second electrode 131 maysupply a power to a second conductive type semiconductor layer 130.

The top surface of the second contact part 173 on an edge of the thirdconductive layer 171 may be spaced from the sidewall 137 of the lightemitting structure layer 135.

The second electrode 131 may be electrically connected to the secondconductive type semiconductor layer 130 by the third conductive layer171 to supply a power to the second conductive type semiconductor layer130. The wire may be bonded to the second electrode 131.

The second electrode 131 may be electrically connected to the lightemitting structure layer 135 and the first and second conductive layers151 and 161. A power supplied into the second electrode 131 may besupplied into the first and second conductive layers 151 and 162 throughthe third conductive layer 171. The second electrode 131 may be disposedon at least one side surface of side surfaces of the light emittingstructure layer 135 or extend in a pattern shape and thus disposed on atleast two side surfaces.

The protection member 141 may be disposed between the first and secondcontact parts 172 and 173 of the third conductive layer 171.Alternatively, the protection member 141 may be disposed between thesecond contact part 172 and the first conductive layer 151 or/and thesecond conductive layer 161. The protection member 141 may physicallycontact the second conductive type semiconductor layer, the firstconductive layer 151, the second conductive layer 161, and a thirdconductive layer 171.

FIG. 23 is a side sectional view of a light emitting device 102according to a sixth embodiment.

Referring to FIG. 23, the light emitting device 102 may include a firstelectrode 115, a light emitting structure layer 135, a first conductivelayer 151, a second conductive layer 161, a third conductive layer 170including a first contact layer 171 and a second contact layer 173, afourth conductive layer 180, and a support member 190.

The light emitting structure layer 135 may include a first conductivetype semiconductor layer 110, an active layer 120, and a secondconductive type semiconductor layer 130. Here, electrons and holessupplied from the first and second conductive type semiconductor layers110 and 130 may be recombined with each other in the active layer 120 togenerate light.

The support member 190 may include an insulating support member or aconductive support member and support the light emitting structure layer135. The support member 190 may be formed of a material havinginsulating properties, e.g., at least one material of SiO₂, SiC,SiO_(x), SiO_(x)N_(y), TiO₂, and Al₂O₃. Also, the support member 190 maybe formed of a material having a specific resistance of about 1×10⁻⁴Ω/cm or more. Alternatively, the support member 190 may be formed of amaterial having conductivity, e.g., at least one of copper (Cu), gold(Au), nickel (Ni), molybdenum (Mo), copper-tungsten (Cu—W), and carrierwafers such as Si, Ge, GaAs, GaN, ZnO, Sic, SiGe, etc.

The fourth conductive layer 180 may be disposed on the support member190. The fourth conductive layer 180 may serve as a bonding layer and bedisposed between the support member 190 and the third conductive layer171 to enhance an adhesion therebetween. The fourth conductive layer 180may include a barrier metal layer or a bonding metal layer. For example,the fourth conductive layer 180 may be formed of at least one of Ti, Au,Sn, Ni, Cr, Ga, Nb, In, Bi, Cu, Al, Si, Ag, and Ta.

The third conductive layer 171 may be disposed on the fourth conductivelayer 180. A first contact part 172 of the third conductive layer 171may contact the second conductive type semiconductor layer 130. Also,the first contact part 172 may serve as an electrode or bonding pad ofthe second conductive type semiconductor layer 130 to supply a powerinto the second conductive type semiconductor layer 130.

The first contact part 172 of the third conductive layer 171 mayvertically overlap the first electrode 115. Also, the first contact part172 may physically or/and electrically contact the lowermost layer ofthe light emitting structure layer 135, e.g., a lower surface of thesecond conductive type semiconductor layer 130 through the first andsecond conductive layers 151 and 161.

The third conductive layer 171 may be formed of at least one of Ni, Pt,Ti, W, V, Fe, and Mo. Also, the third conductive layer 171 may be formedas a single or multi layer.

The third conductive layer 171 may radiate heat generated in the lightemitting structure layer 135 to prevent the light emitting device frombe deteriorated in reliability. Also, the third conductive layer 171 mayhave a thickness of about 0.1 μm to about 200 μm. The third conductivelayer 171 may serve as a heat radiating plate for releasing heat and anelectrode for supplying a power under the light emitting structure layer135. The first contact part 172 of the third conductive layer 171 maycontact the light emitting structure layer 135 with a contact resistancegreater than that of the first conductive layer 151.

The second contact part 173 of the third conductive layer 171 mayprotrude further outward from a sidewall 137 of the light emittingstructure layer 135. Also, a wire or a second electrode may contact thesecond contact part 173. A portion 173A of the second contact part 173may contact an edge of a lower surface of the second conductive typesemiconductor layer 130, but is not limited thereto.

A distance D4 between a side surface of the third conductive layer 171and the sidewall 137 of the light emitting structure layer 135 may begreater than a thickness of an insulation layer 195. Thus, a top surfaceof the second contact part 173 may be exposed.

The second conductive layer 161 may be disposed on the third conductivelayer 171. The second conductive layer 161 may include a reflectivelayer. Also, the second conductive layer 161 may be formed a metallicmaterial having a reflective index of about 50% or more, and thus mayhave various reflective indexes according to characteristics of themetallic material. The second conductive layer 161 may reflect lightincident from the light emitting structure layer 135 to improve lightemitting efficiency of the light emitting device.

For example, the second conductive layer 161 may be formed of a metal oralloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt,Au, and Hf. Alternatively, the second conductive layer 160 may be formedas a multi layer using the metal or alloy and a light-transmittingconductive material such as ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, orATO. For example, the second conductive layer 160 may have a stackedstructure such as IZO/Ni, AZO/Ag, IZO/Ag/Ni, AZO/Ag/Ni, Ag/Cu, orAg/Pd/Cu.

The first conductive layer 151 may be disposed on the second conductivelayer 161. The first conductive layer 151 makes ohmic contact with thesecond conductive type semiconductor layer 130 to smoothly supply apower into the light emitting structure layer 135.

A light-transmitting conductive layer and a metal may be selectivelyused as the first conductive layer 151. For example, the firstconductive layer 150 may be realized as a single or multi layer by usingat least one of indium tin oxide (ITO), indium zinc oxide (IZO), indiumzinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium galliumzinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide(AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrO_(x),RuO_(x), RuO_(x)/ITO, Ni, Ag, Pt, In, Zn, and Sn.

The light emitting structure layer 135 may be disposed on the firstconductive layer 151.

The light emitting structure layer 135 may include a compoundsemiconductor layer including group III-V elements, e.g., the firstconductive type semiconductor layer 110, the active layer 120 under thefirst conductive type semiconductor layer 110, and the second conductivetype semiconductor layer 130 under the active layer 120.

The light emitting structure layer 135 may have inclined side surfacesthrough an isolation etching process for dividing a plurality of chipsinto individual unit chips.

A light extraction pattern 111 may be disposed on the top surface of thelight emitting structure layer 135. The light extraction pattern 111 mayminimize an amount of light totally reflected by a surface thereof toimprove the light extraction efficiency of the light emitting device.The light extraction pattern 111 may have a random shape and arrangementor a specific shape and arrangement.

The first electrode 115 may be disposed on a top surface of the lightemitting structure layer 135. The first electrode 115 may be branched ina predetermined pattern shape, but is not limited thereto. Also, thefirst electrode 115 may have a structure in which at least one pad andan electrode pattern having at least one shape and connected to the padare equally or differently stacked with each other, but is not limitedthereto. The first electrode 115 may be formed of a metal, e.g., atleast one of Cr, Ni, Au, V, W, Ti, and Al. Also, the first electrode 115may supply a power to the first conductive type semiconductor layer 110.

Hereinafter, a method for fabricating the light emitting deviceaccording to the sixth embodiment will be described in detail. However,duplicate descriptions, which have been described already in theprevious exemplary embodiment, will be omitted or described briefly.

FIGS. 24 to 31 are views of a process for fabricating a light emittingdevice according to the sixth embodiment.

Referring to FIG. 24, a light emitting structure layer 135 may be formedon a growth substrate 105.

For example, the growth substrate 105 may be formed of at least one ofsapphire (Al₂O₃), SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge, but is notlimited thereto. In the current embodiment, a silicon (Si) substrate isexemplified as the growth substrate.

The light emitting structure layer 135 may include a first conductivetype semiconductor layer 110, an active layer 120, and a secondconductive type semiconductor layer 130. A buffer layer (not shown) maybe formed between the first conductive type semiconductor layer 110 andthe growth substrate 105 to reduce a lattice constant differencetherebetween.

Referring to FIG. 25, a first conductive layer 151 may be formed on thesecond conductive type semiconductor layer 130, and a second conductivelayer 161 may be formed on the first conductive layer 151. The first andsecond conductive layers 151 and 161 may be formed on a portion of thesecond conductive type semiconductor layer 130. Also, a hole 155 may bedefined in an area at which the first and second conductive layers 151and 161 at least partially and vertically overlap an area on which afirst electrode will be formed later. Also, a hole 156 may be furtherdefined in a boundary of a first distance T1 between the first andsecond conductive layers 151 and 161.

Referring to FIGS. 25 and 26, a third conductive layer 171 may be formedon the second conductive type semiconductor layer 130 and the secondconductive layer 161. The third conductive layer 171 may cover the firstconductive layer 151 and the second conductive layer 161. Also, firstand second contact parts 172 and 173 may be disposed in the holes 155and 156 in which the first and second conductive layers 151 and 161 arenot formed to contact the second conductive type semiconductor layer130. The second contact part 173 of the third conductive layer 171 maybe formed on the boundary of the first distance T1.

Referring to FIG. 27, a fourth conductive layer 180 may be formed on thethird conductive layer 171, and a support member 190 may be formed onthe fourth conductive layer 180. The fourth conductive layer 180 may beformed between the third conductive layer 171 and the support member 190to enhance an adhesion therebetween. The support member 190 may beprepared as a separate sheet. The support member 190 may adhere to thefourth conductive layer 180 through a bonding process or be deposited onthe fourth conductive layer 180 through a deposition process, but is notlimited thereto.

Referring to FIG. 28, the growth substrate 105 may be removed from thelight emitting device of FIG. 27. The growth substrate 105 may beremoved by an etching process. As the growth substrate 105 is removed, asurface of the first conductive type semiconductor layer 110 may beexposed.

Referring to FIG. 29, an isolation etching process may be performed onthe light emitting structure layer 135 along a unit chip region todivide the light emitting structure layer 135 into a plurality of lightemitting structure layers 135. Although the light emitting structurelayer 135 has a vertical side surface in the current embodiment, thelight emitting structure layer 135 may have an inclined side surface bythe isolation etching process. Also, the second contact part 173 of thethird conductive layer 171 may be exposed by the isolation etchingprocess.

A light extraction pattern 111 may be formed on a top surface of thefirst conductive type semiconductor layer 110.

Then, a first electrode 115 may be formed on a portion of the topsurface of the first conductive type semiconductor layer 110. The firstelectrode 115 may be formed of a metal, e.g., at least one of Cr, Ni,Au, Ti, and Al.

Referring to FIG. 30, an insulation layer 195 may be formed on a sidesurface of the light emitting structure layer 135 and the firstconductive type semiconductor layer 110. Although the insulation layer195 is partially formed on the top surface of the first conductive typesemiconductor layer in the current embodiment, the insulation layer 195may be formed on the entire area except the area on which the firstelectrode 115 is formed. The insulation layer 195 may be formed of aninsulating and light-transmitting material, e.g., one of SiO₂, SiO_(x),SiO_(x)N_(y), Si₃N₄, and Al₂O₃.

The insulation layer 195 may be disposed on the light extraction pattern111. Thus, it may prevent the insulation layer 195 and the firstconductive type semiconductor layer 110 from being easily separated fromeach other to improve reliability of the light emitting device.

Referring to FIG. 31, a chip separation process for dividing the lightemitting device of FIG. 30 into individual light emitting device unitsmay be performed to provide the light emitting device 102 according tothe current embodiment.

For example, the chip separation process may be performed by using abreaking process in which a physical force is applied using a blade toseparate a chip, a laser scribing process in which a chip boundary isirradiated with a laser to separate a chip, and an etching processincluding a wet or dry etching process, but is not limited thereto.

According to the fabrication processes of FIGS. 24 to 31, when thegrowth substrate is formed of silicon, the light emitting structurelayer 135 including the first conductive type semiconductor layer 110,the active layer 120, and the second conductive type semiconductor layer130 may be stacked on the growth substrate 105, and then the supportmember 190 may be coupled thereto. Then, when the Si growth substrate105 is removed by the wet etching process, cracks may occur in the lightemitting structure layer 105. Thus, the light emitting structure layers105 may be mismatched with each other. In the current embodiment, whenthe support member 105 is formed of an insulating material, theoccurrence of the cracks may be prevented to provide the light emittingdevice having the improved reliability.

Also, the chip separation process for dividing the light emitting deviceinto individual device units may be realized through a laser scribingprocess. Here, when the support member 190 is formed of a conductivematerial such as a metal, the support member 190 may be melted by heatof a laser to generate burrs, thereby deteriorating the reliability ofthe device.

However, according to the current embodiment, when the support member190 is formed of the insulating material, the above-described limitationsuch as the occurrence of the burrs may be solved.

FIG. 32 is a sectional view of a light emitting device according to theseventh embodiment.

Referring to FIG. 32, a light emitting device 102A may include a firstelectrode 115, a second electrode 131, a light emitting structure layer135, a first conductive layer 151, a second conductive layer 152, athird conductive layer including a first contact layer 171, a fourthconductive layer 180, and a support member 190.

The second electrode 131 may be disposed on a second contact part 173 ofthe third conductive layer 171 and spaced from the light emittingstructure layer 135.

The second electrode 131 may physically contact the third conductivelayer 171 and be electrically connected to a second conductive typesemiconductor layer 130 to supply a power the second conductive typesemiconductor layer 130. A wire may be bonded to the second electrode131.

The second electrode 131 may be spaced from a sidewall 137 of the lightemitting structure layer 135. Also, the second electrode 131 may beelectrically connected to the first and second conductive layers 151 and161. The power supplied into the second electrode 131 may be suppliedinto the first and second conductive layers 151 and 161 through thethird conductive layer 171. The second electrode 131 may be disposed onat least one side surface of side surfaces of the light emittingstructure layer 135 or extend in a pattern shape and thus disposed onthe plurality of side surfaces.

FIG. 33 is a sectional view of a light emitting device package includingthe light emitting device according to the embodiments. In FIG. 33, apackage of the light emitting device according to the second embodimentwill be described as an example.

Referring to FIG. 33, a light emitting device package 200 includes abody 20, first and second lead electrodes 31 and 32 disposed on the body20, a light emitting device 100B disposed on the body 20 andelectrically connected to the first and second lead electrodes 31 and32, a molding member 40 surrounding the light emitting device 100B, afirst wire 50, and a second wire 52.

The body 20 may be formed of a silicon material, a synthetic resinmaterial, or a metal material. An inclined surface may be disposedaround the light emitting device 100B.

The first lead electrode 31 and the second lead electrode 32 areelectrically separated from each other and supply a power to the lightemitting device 100B. Also, the first lead electrode 31 and the secondlead electrode 32 may reflect light generated in the light emittingdevice 100B to improve light efficiency and may radiate heat generatedin the light emitting device 100B to the outside.

The light emitting device 100B may be disposed on the body 20 or thefirst or second lead electrode 31 or 32.

The light emitting device 100B may be electrically connected to thefirst and second lead electrodes 31 and 32 through one of a wiringprocess, a flip-chip process, and a die bonding process. The first wire50 may connect the first lead electrode 31 to the first electrode 115 ofFIG. 1, and the second wire 52 may be bonded to the second leadelectrode 32 on a top surface of an edge of the third conductive layer170 of FIG. 1 or bonded on the second electrode 131 of FIG. 11.

The molding member 40 may surround the light emitting device 100B toprotect the light emitting device 100B. The molding member 40 mayinclude a phosphor to vary a wavelength of light emitted form the lightemitting device 100B. A lens may be disposed on the molding member 40.The lens may have a concave lens shape or a convex lens shape.

The light emitting device package according to the embodiments may beprovided in plurality on a board, and the plurality of light emittingdevice packages may be arranged on the board. Also, optical members suchas a light guide plate, a prism sheet, a diffusion sheet, and afluorescent sheet may be disposed in a path of light emitted from thelight emitting device package. The light emitting device package, theboard, and the optical members may function as a backlight unit or alighting unit. For example, a lighting system may include backlightunits, lighting units, indicating devices, lamps, and street lamps.

FIG. 34 is a view of a backlight unit including the light emittingdevice package according to the embodiments. However, a backlight unit1100 of FIG. 34 is described as an example of the lighting system. Thus,the present disclosure is not limited thereto.

Referring to FIG. 34, the backlight unit 1100 may include a bottom frame1140, a light guide member 1120 disposed within the bottom frame 1140,and a light emitting module 1110 disposed on at least one side or alower surface of the light guide member 1120. Also, a reflective sheet1130 may be disposed under the light guide member 1120.

The bottom frame 1140 may have a box shape with an opened upper side toreceive the light guide member 1120, the light emitting module 1110, andthe reflective sheet 1130. The bottom frame 1140 may be formed of ametal material or a resin material, but is not limited thereto.

The light emitting module 1110 may include a board 300 and a pluralityof light emitting device packages 200 mounted on the board 300. Theplurality of light emitting device packages 200 may provide light to thelight guide member 1120.

As shown in FIG. 34, the light emitting module 1110 may be disposed onat least one of inner surfaces of the bottom frame 1140. Thus, the lightemitting module 1110 may provide light toward at least one side surfaceof the light guide member 1120.

However, the light emitting module 1110 may be disposed under the bottomframe 1140 to provide light toward the under surface of the light guidemember 1120. Since this structure may be variously varied according to adesign of the backlight unit 1100, the present disclosure is not limitedthereto.

The light guide member 1120 may be disposed within the bottom frame1140. The light guide member 1120 may receive the light provided fromthe light emitting module 1110 to produce planar light, thereby guidingthe planar light to a display panel (not shown).

For example, the light guide member 1120 may be a light guide panel(LGP). The LGP may be formed of one of a resin-based material such aspolymethyl methacrylate (PMMA), a polyethylene terephthalate (PET)resin, a poly carbonate (PC) resin, a cyclic olefin copolymer (COC)resin, and a polyethylene naphthalate (PEN) resin.

An optical sheet 1150 may be disposed above the light guide member 1120.

For example, the optical sheet 1150 may include at least one of adiffusion sheet, a light collection sheet, a brightness enhancementsheet, and a fluorescent sheet. For example, the diffusion sheet, thelight collection sheet, the brightness enhancement sheet, and thefluorescent sheet may be stacked to form the optical sheet 1150. In thiscase, the diffusion sheet 1150 may uniformly diffuse light emitted fromthe light emitting module 1110, and the diffused light may be collectedinto the display panel (not shown) by the light collection sheet. Here,the light emitted from the light collection sheet is randomly polarizedlight. The bright enhancement sheet may enhance a degree of polarizationof the light emitted from the light collection sheet. For example, thelight collection sheet may be a horizontal and/or vertical prism sheet.Also, the bright enhancement sheet may be a dual brightness enhancementfilm. Also, the fluorescence sheet may be a light transmitting plate orfilm including a phosphor.

The reflective sheet 1130 may be disposed under the light guide member1120. The reflective sheet 1130 reflects the light emitted through thelower surface of the light guide member 1120 toward a light emissionsurface of the light guide member 1120.

The reflective sheet 1130 may be formed of a material having superiorreflectance, e.g., a PET resin, a PC resin, or a PVC resin, but is notlimited thereto.

FIG. 35 is a perspective view of a lighting unit including the lightemitting device package according to the embodiments. However, alighting unit 1200 of FIG. 35 is described as an example of the lightingsystem. Thus, the present disclosure is not limited thereto.

Referring to FIG. 35, the lighting unit 1200 may include a case body1210, a light emitting module 1230 disposed on the case body 1210, and aconnection terminal 1220 disposed on the case body 1210 to receive apower from an external power source.

The case body 1210 may be formed of a material having good thermaldissipation properties, e.g., a metal material or a resin material.

The light emitting module 1230 may include a board 300 and at least onelight emitting device package 200 mounted on the board 300.

A circuit pattern may be printed on a dielectric to manufacture theboard 300. For example, the board 300 may include a printed circuitboard (PCB), a metal core PCB, a flexible PCB, and a ceramic PCB. Also,the board 300 may be formed of a material which may effectively reflectlight or have a color by which light is effectively reflected, e.g., awhite color or a silver color.

The at least one light emitting device package 200 according to theembodiments may be mounted on the board 300. The light emitting devicepackage 200 may include at least one light emitting diode (LED). The LEDmay include color LEDs, which respectively emit light having a redcolor, a green color, a blue color, and a white color and an ultraviolet(UV) LED emitting UV rays.

The light emitting module 1230 may have various combinations of the LEDsto obtain color impression and brightness. For example, the white LED,the red LED, and the green LED may be combined with each other to securea high color rendering index. Also, a fluorescence sheet may be furtherdisposed on a path of light emitted from the light emitting module 1230.The fluorescence sheet may change a wavelength of light emitted from thelight emitting module 1230. For example, when the light emitted from thelight emitting module 1230 has a blue wavelength band, the fluorescencesheet may include a yellow phosphor. Thus, the light emitted from thelight emitting module 1230 passes through the fluorescence sheet tofinally emit white light.

The connection terminal 1220 may be electrically connected to the lightemitting module 1230 to provide a power to the light emitting module1230. The connection terminal 1220 may be screwed and coupled to anexternal power source in a socket type, but is not limited thereto. Forexample, the connection terminal 1220 may have a pin shape, and thus, beinserted into the external power source. Alternatively, the connectionterminal 1220 may be connected to the external power source by a wire.

As described above, in the lighting system, at least one of the lightguide member, the diffusion sheet, the light collection sheet, thebrightness enhancement sheet, and the fluorescence sheet may be disposedon the path of the light emitted from the light emitting module toobtain desired optical effects.

As described above, the lighting system according to the embodimentsincludes the light emitting device package according to the embodimentsto improve the light efficiency.

The embodiments provide the light emitting device having a newstructure, the method for fabricating the light emitting device, thelight emitting device package, and the lighting system.

The embodiments provide the light emitting device having the improvedreliability, the method for fabricating the light emitting device, alight emitting device package, and a lighting system.

The embodiments provide the method for fabricating the light emittingdevice, which can prevent the wafer align from being mismatched witheach other.

Features, structures, and effects described in the above embodiments areincorporated into at least one embodiment of the present disclosure, butare not limited to only one embodiment. Moreover, features, structures,and effects exemplified in one embodiment can easily be combined andmodified for another embodiment by those skilled in the art. Therefore,these combinations and modifications should be construed as fallingwithin the scope of the present disclosure.

Although embodiments have been described with reference to a number ofillustrative embodiments thereof, it should be understood that numerousother modifications and embodiments can be devised by those skilled inthe art that will fall within the spirit and scope of the principles ofthis disclosure. More particularly, various variations and modificationsare possible in the component parts and/or arrangements of the subjectcombination arrangement within the scope of the disclosure, the drawingsand the appended claims. In addition to variations and modifications inthe component parts and/or arrangements, alternative uses will also beapparent to those skilled in the art.

What is claimed is:
 1. A light emitting device comprising: a lightemitting structure layer comprising a first conductive typesemiconductor layer, a second conductive type semiconductor layerdisposed a lower surface of the first conductive type semiconductorlayer, and an active layer between the first conductive typesemiconductor layer and the second conductive type semiconductor layer;a first electrode electrically connected to the first conductive typesemiconductor layer; an insulating support member under the lightemitting structure layer; a plurality of conductive layers between thelight emitting structure layer and the insulating support member; and asecond electrode disposed on a top surface of one of the plurality ofconductive layers and connected to the plurality of conductive layers,wherein at least two of the plurality of conductive layers has a widthgreater than that of the light emitting structure layer, wherein one ofthe plurality of conductive layers comprises a first contact partdisposed further outward from a first sidewall of the light emittingstructure layer and a second contact part disposed further outward froma second sidewall of the light emitting structure layer, wherein thefirst sidewall of the light emitting structure layer is a differentsidewall from the second sidewall, wherein the second electrode isdisposed on at least one of the first and second contact part.
 2. Thelight emitting device according to claim 1, wherein the plurality ofconductive layers includes a first conductive layer contacted with alower surface of the second conductive type semiconductor layer.
 3. Thelight emitting device according to claim 2, wherein the plurality ofconductive layers includes a second conductive layer disposed betweenthe first conductive layer and the insulating support member, whereinthe second conductive layer includes a reflective layer.
 4. The lightemitting device according to claim 3, wherein the plurality ofconductive layers includes a third conductive layer disposed between thesecond conductive layer and the insulating support member, wherein thethird conductive layer has a thickness thicker than that of at least oneof the second conductive layer and the first conductive layer.
 5. Thelight emitting device according to claim 4, wherein the third conductivelayer includes a third contact part contacted with the lower surface ofthe second conductive type semiconductor layer.
 6. The light emittingdevice according to claim 5, wherein the first electrode is disposed ona top surface of the light emitting structure layer, wherein the thirdcontact part of the third conductive layer vertically corresponds to thefirst electrode.
 7. The light emitting device according to claim 5,wherein the third conductive layer includes the first part and thesecond part, wherein the third part is disposed between the first partand the second part.
 8. The light emitting device according to claim 7,wherein the first to third contact parts are protruded in a directiontoward the lower surface of the second conductive type semiconductorlayer from the third conducive layer.
 9. The light emitting deviceaccording to claim 3, wherein the first and second contact parts areprotruded in a direction toward the lower surface of the secondconductive type semiconductor layer from one of the plurality of theconductive layers.
 10. The light emitting device according to claim 2,further comprising a current blocking layer between the light emittingstructure layer and the plurality of conductive layers, wherein thefirst electrode is disposed on a top surface of the light emittingstructure layer, wherein the current blocking layer verticallycorresponds to the first electrode.
 11. The light emitting deviceaccording to claim 1, wherein the plurality of conductive layerscomprise a first conductive layer contacted with a lower surface of thelight emitting structure layer, a second conductive layer disposedbetween the first conductive layer and the insulating support member toreflect light, a third conductive layer disposed between the secondconductive layer and the insulating support member to radiate heat, anda fourth conductive layer disposed between the third conductive layerand the insulating support member, wherein at least one of the firstconductive layer and the third conductive layer includes at least one ofthe first contact part and the second contact part.
 12. The lightemitting device according to claim 11, wherein the first contact partand the second contact part are contacted with a lower surface of thelight emitting structure layer.
 13. A light emitting device comprising:a light emitting structure layer comprising a first conductive typesemiconductor layer, a second conductive type semiconductor layer undera lower surface of the first conductive type semiconductor layer, and anactive layer between the first conductive type semiconductor layer andthe second conductive type semiconductor layer; a first electrodeelectrically connected to the first conductive type semiconductor layer;a support member under the light emitting structure layer; a pluralityof conductive layers disposed between the light emitting structure layerand the support member; a second electrode disposed on a top surface ofone of the plurality of conductive layers and connected to the pluralityof conductive layers; and a protection member disposed between the lightemitting structure layer and the support member, wherein at least two ofthe plurality of conductive layers has a width greater than that of thelight emitting structure layer, wherein one of the plurality ofconductive layers comprises a first contact part disposed furtheroutward from a first sidewall of the light emitting structure layer anda second contact part disposed further outward from a second sidewall ofthe light emitting structure layer, wherein the first sidewall and thesecond sidewall of the light emitting structure layer are disposed on adifferent sidewall from each other, wherein the first and second contactparts are protruded in a direction toward a lower surface of the secondconductive type semiconductor layer from one of the plurality of theconductive layers, wherein the second electrode is disposed furtheroutward from a sidewalls of the light emitting structure layer and islocated at a higher position than a top surface of the plurality ofconductive layers, wherein the plurality of conductive layers and thesecond electrode are electrically connected to the second conductivetype semiconductor layer.
 14. The light emitting device according toclaim 13, wherein the plurality of conductive layers comprise a firstconductive layer contacted with a lower surface of the light emittingstructure layer, a second conductive layer disposed between the firstconductive layer and the support member to reflect light, a thirdconductive layer disposed between the second conductive layer and thesupport member to radiate heat, and a fourth conductive layer disposedbetween the third conductive layer and the support member.
 15. The lightemitting device according to claim 14, wherein at least one of the firstcontact part and the second contact part is disposed under the secondelectrode.
 16. The light emitting device according to claim 15, whereinthe third conductive layer comprises the first contact part and thesecond contact part.
 17. The light emitting device according to claim16, wherein the protection member is disposed between the first andsecond contact parts of the third conductive layer.
 18. The lightemitting device according to claim 16, wherein the first and secondconductive layers are disposed between the first and second contactparts of the third conductive layer.
 19. The light emitting deviceaccording to claim 13, further comprising: an insulation layer aroundthe light emitting structure layer; and a light extraction pattern on atop surface of the first conductive type semiconductor layer.
 20. Alight emitting device comprising: a light emitting structure layercomprising a first conductive type semiconductor layer, a secondconductive type semiconductor layer disposed a lower surface of thefirst conductive type semiconductor layer, and an active layer betweenthe first conductive type semiconductor layer and the second conductivetype semiconductor layer; a first electrode electrically connected tothe first conductive type semiconductor layer; an insulating supportmember under the light emitting structure layer; a plurality ofconductive layers between the light emitting structure layer and theinsulating support member; a second electrode disposed on a top surfaceof one of the plurality of conductive layers and connected to theplurality of conductive layers; and an insulation layer around the lightemitting structure layer; wherein at least two of the plurality ofconductive layers has a width greater than that of the light emittingstructure layer, wherein the plurality of conductive layers includes acontact layer contacted with a lower surface of the second conductivetype semiconductor layer, a first metal layer disposed between thecontact layer and the insulating support member, a second metal layerdisposed between the first metal layer and the insulating supportmember, a third metal layer disposed between the second metal layer andthe insulating support member, wherein one of the plurality of metallayers comprises a first contact part disposed further outward from afirst sidewall of the light emitting structure layer and a secondcontact part disposed further outward from a second sidewall of thelight emitting structure layer, wherein the second electrode verticallycorresponds to at least one of the first contact part and the secondcontact part, wherein the first and second contact parts are protrudedin a direction toward a lower surface of the second conductive typesemiconductor layer from one of the plurality of the conductive layers.